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Preparation and Characterization of Mg-Doped GaN Nanowires by Au-Catalyzed Magnetron Sputtering Dep

放大字体  缩小字体 发布日期:2014-11-12  来源:2014高层论坛论文集  作者:Feng Shi  浏览次数:537

Preparation and Characterization of Mg-Doped GaN Nanowires by Au-Catalyzed Magnetron Sputtering Deposition

Ruguo Liang1a, Rui Liang2b, Gang Cao3c, Feng Shi4d*
1 Engineering Training Center, Shandong University, Jinan, 250002, P.R. China
2 Chengxi Power Supply Branch, State Grid Tianjin Power, Tianjin, 300200, P.R. China
3 School of Management Science and Engineering, Shandong University of Finance and Economics, Jinan, 250014, P.R. China
4 College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China
alrg0016@163.com, b254175449@qq.com, ccaogang@126.com, dsf751106@sina.com.cn

Abstract: Mg-doped GaN nanowires have been successfully synthesized on Si (111) substrates by magnetron sputtering deposition through ammoniating Ga2O3/Au thin films at 900 ℃ for 15 min. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum were carried out to characterize microstructure, morphology, and optical property of GaN sample. The results demonstrate that the nanowires are single-crystal Mg-doped GaN with hexagonal wurtzite structure and high crystalline quality, which have the size of 40 nm in diameter and several tens of microns in length and good emission property. The growth procedure mainly follows the VLS mechanism, and Au plays an important role as catalyst, and more defect energy is formed due to metallic Au and thus promote the growth of GaN nanowires.


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